Theoretical Study in Doping Process

Ion implantation and diffusion which occur during irradiation are investigated through out series of related processes. In our study, the whole process will be viewed as a two-step process. The first includes the implantation process. The equation of motion for ion implantation is considered as a modified form of Fick's law, which solved analytically taking the sputtering process into account. The second step i.e. the step of ion-redistribution through out diffusion is studied keeping in mind that the total number of impurities is conserved in the step of injection and diffusion. The case of diffusion-concentration dependence and the suitable equation for thermal diffusion is studied too. The steady state situation is studied extendedly. The diffusion in multilayer structure and a useful introduction about hererostructures is given with important related effects are presented. Extended theoretical treatment concerned with the extension to multilayer structures is presented. The case of "constant-surface-concentration-diffusion" is treated by considering the surface to be covered with certain type of adatoms. The coverage-dependent diffusion is modeled by assuming certain form