Influence of Temperature on Microelectronics and System Reliability

Influence of Temperature on Microelectronics and System Reliability

AngličtinaMěkká vazbaTisk na objednávku
Lall Pradeep
Taylor & Francis Ltd
EAN: 9780367400972
Tisk na objednávku
Předpokládané dodání v pátek, 7. srpna 2026
1 080 Kč
Běžná cena: 1 200 Kč
Sleva 10 %
ks
Chcete tento titul ještě dnes?
knihkupectví Megabooks Praha Korunní
není dostupné
Librairie Francophone Praha Štěpánská
není dostupné
knihkupectví Megabooks Ostrava
není dostupné
knihkupectví Megabooks Olomouc
není dostupné
knihkupectví Megabooks Plzeň
není dostupné
knihkupectví Megabooks Brno
není dostupné
knihkupectví Megabooks Hradec Králové
není dostupné
knihkupectví Megabooks České Budějovice
není dostupné
knihkupectví Megabooks Liberec
není dostupné

Podrobné informace

This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The
EAN 9780367400972
ISBN 0367400979
Typ produktu Měkká vazba
Vydavatel Taylor & Francis Ltd
Datum vydání 19. června 2019
Stránky 336
Jazyk English
Rozměry 254 x 178
Země United Kingdom
Autoři Hakim Edward B.; Lall Pradeep; Pecht Michael G.
Informace o výrobci
Kontaktní informace výrobce nejsou momentálně dostupné online, na nápravě intenzivně pracujeme. Pokud informaci potřebujete, napište nám na [email protected], rádi Vám ji poskytneme.