Long Channel DG MOSFET Modeling

The rapid advancement of microelectronics has relied on miniaturization of transistors which increases the package density. The increase in package density results in increased complexities of the IC design. Designing such complex integrated circuits without computer-aided (CAD) tool is impossible. CAD tools help in predicting the performance and electrical behavior of the ICs correctly prior to fabrication/manufacturing and saves millions of dollars. The accuracy of the CAD tools depends upon the accuracy of the models used. These are regarded as the basic requirements for the analysis and design of ICs and should be compact. In order to overcome device physics and SCEs limitations, researches have been carried out for last two decades in the direction of alternative device materials and device architectures. This book focuses on the carrier based approach to develop the compact model of long channel undoped DG MOSFET to provide an insight of the electrical/physical behavior. This method avoids the difficulties in calculating the surface and centric potential as long as the carrier concentrations at the boundaries are known.